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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V
ID25 76 A 76 A 76 A 76 A
RDS(on) 11 mW 12 mW 11 mW 12 mW
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID119 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 10 kW Continuous Transient TC TC TC TC = 25C (Chip capability = 125 A) = 119C, limited by external leads = 25C, pulse width limited by TJM = 25C N06 N07 N06 N07
Maximum Ratings 60 70 60 70 20 30 76 76 304 100 30 2 5 360 -55 ... +175 175 -55 ... +150 V V V V V V A A A A mJ J V/ns
TO-247 AD
(TAB)
G = Gate, S = Source, Features
q
D = Drain, TAB = Drain
TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
q
W C C C C g
q q
q
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 6
q
International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
1.15/10 Nm/lb.in. Applications
q q q q
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 V V V nA mA mA mW mW
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 40 A
q q q
3.4 100
DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays
TJ = 25C TJ = 125C
100 500 11 12
Advantages
q
76 N06/N07-11 76 N06/N07-12 Pulse test, t 300 ms, duty cycle d 2 %
q q
Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density
92785H (12/98)
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-4
IXFH 76 N06-11 IXFH 76 N06-12
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 40 4400 VGS = 0 V, VDS = 25 V, f = 1 MHz 2000 1200 40 VGS = 10 V, VDS = 50 V, ID = 30 A RG = 1 W (External) 70 130 55 240 VGS = 10 V, VDS = 0.5 * VDSS, ID = 40 A 30 120 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXFH 76 N07-11 IXFH 76 N07-12
TO-247 AD (IXFH) Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 40 A, pulse test
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 76 304 1.5 150 250 A A V ns ns
J K L M N
1.5 2.49
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/ms, TJ = 25C VR = 25 V TJ = 125C
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFH 76 N06-11 IXFH 76 N06-12
Fig.1 Output Characteristics
100 90 80 70 60 50 40 30 20 10 0 0.0
5V TJ = 25C VGS=10V 9V 8V
IXFH 76 N07-11 IXFH 76 N07-12
Fig. 2 Input Admittance
300
7V 6V
250
TJ=25C
ID - Amperes
ID - Amperes
200 150 100 50 0
TJ=150C TJ=100C
0.5
1.0
1.5
2.0
2
4
6
8
10
12
VDS - Volts
VGS - Volts
Fig. 3 Rds(on) vs. Drain Current
1.4
TJ = 25C
Fig. 4 RDS(ON) Temperature Dependence
2.25 2.00
ID = 38A VGS = 10V
1.3
RDS(ON) - Normalized
RDS(ON) - Normalized
1.2
VGS = 10V
1.75 1.50 1.25 1.00 0.75
1.1 1.0
VGS = 15V
0.9 0.8 0 50 100 150 200 250 300
0.50 -50 -25
0
25
50
75 100 125 150 175
ID - Amperes
TJ - Degrees C
Fig. 5 ID vs. Case Temperature
90 80 70 80
Fig. 6 Transconductance
Transconductance - Siemens
VGS=10V TJ = 25C
70 60 50 40 30 20 10 0 0 50 100 150
ID - Amperes
60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
TJ = 100C
TJ = 150C
200
250
300
Case Temperature - C
ID - Amperes
(c) 2000 IXYS All rights reserved
3-4
IXFH 76 N06-11 IXFH 76 N06-12
Fig. 7 Gate Charge
16 14 12
VDS = 40V ID = 38A IG = 1mA
IXFH 76 N07-11 IXFH 76 N07-12
Fig. 8 Forward Bias Safe Operating Area
1000
Limited by Rds(on) 10ms 100ms
10 8 6 4 2 0 0 50 100 150 200 250 300 350
ID - Amperes
VGS - Volts
100
1ms 10ms
10
100ms DC TC = 25C
1 1 10 100
Gate Charge - nCoulombs
VDS - Volts
Fig. 9 Capacitance Curves
6000
f = 1MHz
Fig. 10 Source Current vs. Source to Drain Voltage
200
TJ =150C
5000
Capacitance - pF
3000
Coss
ID - Amperes
4000
Ciss
150
100
TJ =150C TJ =25C
2000 1000 0 0 10 20 30 40
Crss
50
TJ =100C
0 0.0
0.5
1.0
1.5
2.0
VDS - Volts
VSD - Volts
Fig. 11 Transient Thermal Impedance
Thermal Response - K/W
D=0.5
0.100
D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
(c) 2000 IXYS All rights reserved
4-4

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